Infineon BSC076N06NS3: A High-Performance OptiMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this innovation is Infineon's OptiMOS™ family, with the BSC076N06NS3 standing out as a prime example of a high-performance N-channel power MOSFET engineered for demanding switching applications.

This MOSFET is built on an advanced trench technology platform, which is the cornerstone of its superior performance. It is characterized by an exceptionally low on-state resistance (R DS(on)) of just 7.6 mΩ maximum at 10 V. This ultra-low resistance is a critical figure of merit, as it directly translates to minimized conduction losses. When the MOSFET is fully turned on, very little energy is wasted as heat, leading to significantly improved system efficiency and reduced thermal management requirements.

Beyond its static performance, the BSC076N06NS3 excels in dynamic operation. Its low gate charge (Q G) and optimized internal capacitances ensure extremely fast switching speeds. This capability is paramount in high-frequency switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits, where reducing switching losses is essential for achieving peak efficiency. The device's ability to switch rapidly allows designers to increase the operating frequency of their systems, which in turn enables the use of smaller passive components like inductors and capacitors, thereby increasing overall power density.

Rated for 60 V drain-source voltage (V DS) and a continuous drain current (I D) of 40 A, this MOSFET offers a robust solution for a wide range of low-voltage applications. These include:

Synchronous rectification in server and telecom power supplies.

DC-DC conversion stages in computing and industrial equipment.

Motor drive and control circuits for consumer and industrial tools.

Load switching in automotive systems.

The device is offered in the space-saving, thermally efficient SuperSO8 package, which provides an excellent power-to-footprint ratio and enhances heat dissipation from the die to the printed circuit board.

ICGOODFIND: The Infineon BSC076N06NS3 OptiMOS™ MOSFET is a benchmark component for efficiency-centric designs, combining an ultra-low R DS(on) for minimal conduction loss and superior switching characteristics for reduced dynamic loss, making it an ideal choice for compact, high-frequency power conversion systems.

Keywords:

1. Low R DS(on)

2. High Efficiency

3. Fast Switching

4. OptiMOS™ Technology

5. Power Density