Infineon IPB027N10N5 100V OptiMOS 5 Power MOSFET: Enabling High-Efficiency Power Conversion
In the rapidly evolving world of power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon IPB027N10N5, a 100V N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, stands out as a key enabler for next-generation power conversion systems. Designed to meet the demanding requirements of applications such as server and telecom SMPS, industrial motor drives, solar inverters, and battery management systems, this component sets a new benchmark in performance.
A primary strength of the IPB027N10N5 lies in its exceptionally low figure-of-merits (R DS(on) Q G). With a maximum on-state resistance of just 2.7 mΩ at 10 V, it minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This is crucial for increasing the power density of systems, as designers can use smaller heatsinks or operate at higher currents. Furthermore, its optimized gate charge (Q G) ensures superior switching performance, drastically reducing switching losses, which is a critical advantage in high-frequency switch-mode power supplies (SMPS) where efficiency directly impacts thermal management and operating costs.
The device is housed in an Infineon’s proprietary SuperSO8 package, which offers a significantly improved thermal resistance compared to standard SO-8 packages. This allows the MOSFET to dissipate heat more effectively, supporting higher continuous current handling (up to 100 A) and enhancing long-term reliability under strenuous operating conditions. The package also provides a low parasitic inductance, which is vital for maintaining signal integrity and minimizing voltage spikes in fast-switching circuits.
Another standout feature is its enhanced ruggedness and durability. The OptiMOS™ 5 technology offers a high body diode robustness, making it highly resilient against reverse recovery events. This intrinsic robustness simplifies circuit design by increasing the system's tolerance to voltage transients and overload conditions, common in industrial environments.
From a design perspective, the IPB027N10N5 facilitates more compact and cost-effective solutions. Its high efficiency allows for the use of smaller passive components and reduces the need for complex cooling apparatus, thereby lowering the total system cost and shrinking the form factor. Whether used in synchronous rectification, DC-DC converters, or motor control bridges, this MOSFET delivers the performance needed to push the boundaries of power conversion technology.
ICGOOODFIND: The Infineon IPB027N10N5 OptiMOS™ 5 MOSFET is a superior choice for engineers focused on maximizing efficiency and power density. Its industry-leading low R DS(on), excellent switching characteristics, and robust thermal performance make it an indispensable component for modern high-efficiency power conversion designs.
Keywords: Power Efficiency, OptiMOS™ 5, Low R DS(on), SuperSO8 Package, High-Frequency Switching.
