**HMC787ALC3B: A High-Performance 20 GHz to 44 GHz GaAs pHEMT MMIC Low-Noise Amplifier**

The relentless drive for higher data rates and greater bandwidth in modern communication, radar, and test & measurement systems has pushed operational frequencies deep into the Ka-band and beyond. At the heart of these sophisticated systems, the initial amplification stage is critical, as it sets the overall signal-to-noise ratio and system sensitivity. The **HMC787ALC3B** stands as a premier solution in this demanding role: **a high-performance, monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA)** engineered to excel from **20 GHz to 44 GHz**.

Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier is designed for optimal performance across its ultra-wide bandwidth. A key metric for any LNA is its noise figure, which quantifies the degradation of the signal-to-noise ratio. The HMC787ALC3B delivers an exceptionally **low typical noise figure of 2.0 dB**, ensuring that minimal additional noise is introduced to the weak incoming signal, thereby preserving the integrity of the data chain from the very first stage.

Complementing its low-noise characteristics is its significant gain. The amplifier provides a robust **typical small-signal gain of 19 dB**, which effectively elevates the desired signal far above the noise floor of subsequent components in the receive chain. This high gain is coupled with excellent output power capabilities, achieving a typical output IP3 of +22 dBm. This high linearity is crucial for handling strong interfering signals without generating harmful intermodulation distortion, which can corrupt the desired signal.

The HMC787ALC3B is presented in a leadless, RoHS-compliant 3x3 mm SMT package (LC3), making it an ideal candidate for high-volume, automated PCB assembly. Its MMIC design incorporates all matching elements on-chip, simplifying board design and requiring only DC blocking capacitors and bias feed inductors for operation. A single negative gate supply and positive drain supply are needed, with the device typically drawing 65 mA from a +3V drain supply.

Its combination of wide instantaneous bandwidth, low noise, and high gain makes it exceptionally versatile. Primary applications include point-to-point and point-to-multi-point radio systems, military and commercial radar systems, satellite communications, and as a critical building block in test equipment and instrumentation.

**ICGOOODFIND:** The HMC787ALC3B is a standout MMIC LNA that delivers an exceptional blend of ultra-wideband performance, very low noise, and high gain in a compact surface-mount package. It is an optimal choice for designers seeking to maximize sensitivity and dynamic range in next-generation Ka-band systems.

**Keywords:** **Ka-Band Amplifier**, **Low Noise Figure**, **GaAs pHEMT**, **MMIC LNA**, **High Linear Gain**