Infineon BFR181W: NPN Silicon RF Transistor for High-Frequency Amplification Applications

The Infineon BFR181W is a high-performance NPN silicon radio frequency (RF) transistor engineered specifically for high-frequency amplification applications. As a critical component in modern RF circuits, this device excels in scenarios demanding low noise and high gain across the very high frequency (VHF) to ultra-high frequency (UHF) bands, making it a preferred choice for designers of communication systems, broadcast equipment, and other sensitive electronic devices.

Housed in a compact and industry-standard SOT-323 surface-mount (SMD) package, the BFR181W is optimized for use in small-signal amplifiers. Its primary function is to boost weak signals with minimal added distortion, a crucial requirement in receiver front-ends where signal integrity is paramount. The transistor's NPN silicon construction provides a robust foundation, offering excellent performance with a typical transition frequency (fT) of 8 GHz. This high fT value is a key indicator of its ability to operate effectively at very high frequencies, ensuring signal clarity and amplification efficiency.

A standout feature of the BFR181W is its low noise figure, which is essential for preserving the quality of weak incoming signals before they are processed by subsequent stages of a circuit. This characteristic, combined with its high gain, makes it exceptionally suitable for applications such as VHF/UHF amplifiers, oscillator circuits, and driver stages. Furthermore, its SMD package is designed for automated assembly processes, facilitating high-volume manufacturing and supporting the trend towards miniaturization in electronics design.

In practical terms, the BFR181W is often deployed in infrastructure like base stations, two-way radios, and television signal amplifiers. Its reliability and consistent performance under various operating conditions have cemented its reputation as a go-to component for RF engineers seeking a balance of performance, size, and cost.

ICGOOFIND

The Infineon BFR181W is a quintessential NPN RF transistor that delivers high-frequency performance, low noise amplification, and exceptional gain in a miniature SMD package, making it an indispensable component for advanced RF circuit design.

Keywords: RF Transistor, High-Frequency Amplification, Low Noise Figure, SMD Package, Small-Signal Amplifier